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| BUZ 310 SIPMOS (R) Power Transistor * N channel * Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 310 VDS 1000 V ID 2.5 A RDS(on) 5 Package TO-218 AA Ordering Code C67078-A3101-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 k Continuous drain current A 2.5 TC = 25 C Pulsed drain current IDpuls 10 TC = 25 C Gate source voltage Power dissipation VGS Ptot 20 78 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... ...+ 150 C -55 ... ...+ 150 1.6 75 C 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 310 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 1000 3 20 100 10 4.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 A VDS = 1000 V, VGS = 0 V, Tj = 25 C VDS = 1000 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 5 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group 2 07/96 BUZ 310 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.7 1.5 1600 70 30 - S pF 2100 120 55 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Turn-off delay time td(off) 110 140 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Fall time tf 60 80 VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Semiconductor Group 3 07/96 BUZ 310 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.05 2 15 2.5 10 V 1.3 s C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 6 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 310 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 2.6 A 80 W 2.2 Ptot ID 60 2.0 1.8 50 1.6 1.4 40 1.2 1.0 0.8 30 20 0.6 0.4 10 0.2 0 0 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A K/W t = 630.0ns p 1 s 10 s ID 10 1 ZthJC 10 0 DS / I D 10 0 = V 100 s 10 -1 D = 0.50 0.20 0.10 DS (o n) R 1 ms 10 ms 10 -1 DC 10 -2 single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 310 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 6.0 A l kj i h g VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 16 a b c d e f Ptot = 78W RDS (on) 12 5.0 ID 4.5 4.0 3.5 e f c d e f g h 10 3.0 2.5 2.0 1.5 c d 8 g h i k j i j k l 6 4 2 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 1.0 b 0.5 0.0 0 10 20 30 40 a h i j k 8.0 9.0 10.0 20.0 50 V 65 0 0.0 1.0 2.0 3.0 4.0 A 5.5 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 3.0 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 2.0 A ID 2.0 gfs S 1.5 1.0 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 0.0 0.5 1.0 1.5 2.0 VGS A ID 3.0 Semiconductor Group 6 07/96 BUZ 310 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.5 A, VGS = 10 V 24 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 20 98% RDS (on) VGS(th) 3.6 3.2 18 typ 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 C 160 2.8 2.4 2.0 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 nF C 10 0 A Ciss IF 10 0 10 -1 10 -1 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 310 Drain-source breakdown voltage V(BR)DSS = (Tj ) Typ. gate charge VGS = (QGate) parameter: ID puls = 4 A 16 1200 V 1160 V V(BR)DSS 1140 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 2 0 -20 20 60 100 C 160 0 10 20 30 40 50 nC 65 Tj Q Gate Semiconductor Group 8 07/96 BUZ 310 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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